Heterostructure semiconductor device and method of fabricating s

Details Heterostructure semiconductor device and method of fabricating s Heterostructure semiconductor device and method of fabricating s

1996-12-26

1998-11-17

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

257192, 257193, H01L 21338

Patent

active

058375708

ABSTRACT:
A heterostructure semiconductor device such as a GaAs MESFET has an n-type GaAs layer disposed as a channel region in a substrate, a gate electrode disposed on the n-type GaAs layer in direct contact therewith, source and drain electrodes disposed on the n-type GaAs layer, and a GaInP layer disposed as a passivation layer on the n-type GaAs layer in lattice alignment therewith between the gate electrode and the source and drain electrodes.

REFERENCES:
patent: 5324682 (1994-06-01), Tserng
patent: 5488237 (1996-01-01), Kuwata
patent: 5681766 (1997-10-01), Tserng et al.
patent: 5686740 (1997-11-01), Hida
patent: 5698888 (1997-12-01), Fukaishi
IEEE Electron Device Letters, vol. 15, No. 9, Sep. 1994, pp. 324-326 by Jong-Lam Lee et al.

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