Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2011-03-29
2011-03-29
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S011000, C257S012000, C257S015000, C257S018000, C257S020000, C257S183000, C257S185000, C257S187000, C257S189000, C257S191000, C257SE29188, C257SE21371, C438S312000
Reexamination Certificate
active
07915640
ABSTRACT:
A metamorphic buffer layer is formed on a semi-insulating substrate by an epitaxial growth method, a collector layer, a base layer, an emitter layer and an emitter cap layer are sequentially laminated on the metamorphic buffer layer, and a collector electrode is provided in contact with an upper layer of the metamorphic buffer layer. The metamorphic buffer layer is doped with an impurity, in a concentration equivalent to or higher than that in a conventional sub-collector layer, by an impurity doping process during crystal growth so that the metamorphic buffer layer will be able to play the role of guiding the collector current to the collector electrode. Since the sub-collector layer, which is often formed of a ternary mixed crystal or the like having a high thermal resistance, can be omitted, the heat generated in the semiconductor device can be rapidly released into the substrate.
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Zheng et al. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy; Applied Physics Letters; vol. 77, No. 6; Aug. 7, 2000.
H.Q. Zheng et al.; Metamorphic InP/InGaAs double-heterojunction bipolar transistor on GaAs grown by molecular-beam epitaxy; Applied Physics Letters; vol. 77, No. 6, Aug. 7, 2000.
Joy Jeremy J
Smith Zandra
SNR Denton US LLP
Sony Corporation
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