Heterojunction field effect transistor and method of fabricating

Details Heterojunction field effect transistor and method of fabricating Heterojunction field effect transistor and method of fabricating

1999-12-23

2000-07-18

Picardat, Kevin M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438167, 438571, H01L 21338

Patent

active

060906499

ABSTRACT:
A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.

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