Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-01-25
2011-01-25
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C257SE33046
Reexamination Certificate
active
07875871
ABSTRACT:
In the present invention a metal oxide or nitride compound which is a wide-band-gap semiconductor abuts a silicon, germanium, or alloy of silicon and/or germanium of the opposite conductivity type to form a p-n heterojunction. This p-n heterojunction can be used to advantage in various devices. In preferred embodiments, one terminal of a vertically oriented p-i-n heterojunction diode is a metal oxide or nitride layer, while the rest of the diode is formed of a silicon or silicon-germanium resistor; for example a diode may include a heavily doped n-type silicon region, an intrinsic silicon region, and a nickel oxide layer serving as the p-type terminal. Many of these metal oxides and nitrides exhibit resistivity-switching behavior, and such a heterojunction diode can be used in a nonvolatile memory cell, for example in a monolithic three dimensional memory array.
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Herner S. Brad
Kumar Tanmay
Cao Phat X
Dugan & Dugan PC
SanDisk 3D LLC
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