Heterojunction bipolar transistor with improved base layer

Details Heterojunction bipolar transistor with improved base layer Heterojunction bipolar transistor with improved base layer

1991-02-19

1992-11-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257198, H01L 2972, H01L 29161

Patent

active

051609940

ABSTRACT:
On a semi-insulating substrate, an emitter layer (or a collector layer), a base layer, a compound semiconductor layer containing In and a collector layer (or an emitter layer) are provided. The collector layer (or the emitter layer) is patterned to form a collector region (or an emitter region). When the base surface is revealed by a reactive ion beam etching, the etching will be stopped at the compound semiconductor layer that contains In. Consequently, the nonuniformity in the base resistance that depends on the thickness of the base lead-out region can be reduced.

REFERENCES:
A. G. Milnes; "Semiconductor Heterojunction Topics: introduction and overview"; 1986; solid state electronics vol. 29, No. 2, pp. 106-107.
Asbeck et al; "GaAlAs/GaAs Heterojunction Bipolar transistors: Issues and Prospects for Application"; 1989; IEEE transactions pp. 2032-2042.
Matthews et al; "Defects in Epitaxial Multilayers"; 1974 Journal of crystal growth; pp. 118-125.
Tijburg et al; "Selective etching of III-V compounds with Redox systems"; May 1976; Journal of Elec. Chem society; pp. 687-691.
Shimamoto et al; "A GaAs Bi-Fet technology for large scale integration"; IEDM; 1989; pp. 15.2.1-15.2.4.
"Eu.sup.2+ luminescence in Hexagonal Aluminates containing large Divalent or trivalent cations"; Stevals et al; Journal of elec. chem Soc; May 1976; p. 691.

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