Heterojunction bipolar transistor using reverse emitter window

Details Heterojunction bipolar transistor using reverse emitter window Heterojunction bipolar transistor using reverse emitter window

2006-04-04

2006-04-04

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S320000, C438S321000

Reexamination Certificate

active

07022578

ABSTRACT:
A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, an intrinsic base region of a compound semiconductive material over the collector region, an extrinsic base region, an emitter structure, an interlevel dielectric layer over the collector region, extrinsic base region and emitter structure, and connections through the interlevel dielectric layer to the base region, the emitter structure, and the collector region. The emitter structure is formed by forming a reverse emitter window over the intrinsic base region, which subsequently is etched to form an emitter window having a multi-layer reverse insulating spacer therein.

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