Heterojunction bipolar transistor structure

Details Heterojunction bipolar transistor structure Heterojunction bipolar transistor structure

2007-05-29

2007-05-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S197000, C257SE29188, C257SE29033, C438S312000

Reexamination Certificate

active

10934891

ABSTRACT:
A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0≦y, z≦1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.

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