Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2005-05-17
2005-05-17
Eckert, George (Department: 2815)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S309000, C438S342000, C438S343000, C438S455000
Reexamination Certificate
active
06893932
ABSTRACT:
A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.
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Pankove Jacques Isaac
Torvik John Tarje
Astralux, Inc.
Eckert George
Sheridan & Ross P.C.
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