Heterojunction bipolar transistor and method for fabricating...

Details Heterojunction bipolar transistor and method for fabricating... Heterojunction bipolar transistor and method for fabricating...

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S172000, C438S189000

Reexamination Certificate

active

07001820

ABSTRACT:
The following layers are successively formed on a heavily-doped n-type first subcollector layer: a heavily-doped n-type second subcollector layer made of a material having a small band gap; an i-type or a lightly-doped n-type collector layer; a heavily-doped p-type base layer; an n-type emitter layer made of a material having a large band gap; a heavily-doped n-type emitter cap layer; and a heavily-doped n-type emitter contact layer made of a material having a small band gap. Alloying reaction layers are formed under an emitter electrode, a base electrode and a collector electrode.

REFERENCES:
patent: 6403436 (2002-06-01), Tanomura
patent: 2001-308103 (2001-11-01), None

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