Heterojunction bipolar transistor and fabrication method of...

Details Heterojunction bipolar transistor and fabrication method of... Heterojunction bipolar transistor and fabrication method of...

2007-02-15

2010-12-28

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27053

Reexamination Certificate

active

07859030

ABSTRACT:
A SiGe-HBT having a base region made of SiGe mixed crystal. The base region includes: an intrinsic base region having junctions with a collector region and an emitter region; and an external base region for connecting the intrinsic base region with a base electrode. The intrinsic base region and the external base region are doped with a first impurity of a given conductivity type. The external base region is further doped with a second impurity. As the first impurity, an element smaller in atomic radius than Si (such as boron, for example) is selected, and as the second impurity, an element larger in atomic radius than the first impurity (such as Ge, In and Ga, for example) is selected.

REFERENCES:
patent: 2003/0170960 (2003-09-01), Jagannathan et al.
patent: 2005/0116226 (2005-06-01), Von Kanel
patent: 2-504205 (1990-11-01), None
patent: 2001-332563 (2001-11-01), None
patent: 2002-313798 (2002-10-01), None
patent: WO 88/08206 (1988-10-01), None

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