Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-09-14
2010-10-05
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257S195000, C257SE29246
Reexamination Certificate
active
07808016
ABSTRACT:
A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate wafer having a first end and a second end, a conducting layer above the first end of the substrate wafer, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.
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Bergman Joshua I.
Brar Berinder
Ikhlassi Amal
Nagy Gabor
Sullivan Gerard J.
Diaz José R
Parker Kenneth A
Snell & Wilmer L.L.P.
Teledyne Licensing LLC
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