Heteroepitaxial semiconductor device including silicon substrate

Details Heteroepitaxial semiconductor device including silicon substrate Heteroepitaxial semiconductor device including silicon substrate

1996-07-16

1998-06-02

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257200, H01L 2926

Patent

active

057604266

ABSTRACT:
A semiconductor device includes an Si substrate, a stress absorbing layer of GaAs and disposed on the Si substrate, a buffer layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the stress absorbing layer, and a compound semiconductor layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the buffer layer. Therefore, the buffer layer protects the GaAs stress absorbing layer from high temperatures during the formation of the compound semiconductor layer, whereby the stress absorbing layer is prevented from decomposition. As a result, a stress due to lattice mismatch or thermal stress between the Si substrate and the compound semiconductor layer is absorbed in the GaAs stress absorbing layer having a lowest bulk modulus, whereby a compound semiconductor layer with reduced dislocations may be grown on the buffer layer and bending of the Si substrate prevented.

REFERENCES:
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5290393 (1994-03-01), Nakamura
R. D. Bringans, et al, "Formation of the Interface between GaAs and Si: Implications for GaAs-on-Si Heteroepitaxy," Apl. Phys. Lett. vol. 51, No. 7, pp. 523-525.
Liu et al., "Large Area Growth of GaN Thin Films in a Multi-Wafer Rotating Disk Reactor", Inst. Phys. Conf. Ser. No. 141, Chapter 2, pp. 119-124.
Oberman et al., "Molecular Beam Epitaxy of Gallium Nitride by Electron Cyclotron Resonance Plasma and Hydrogen Azide", Journal of Crystal Growth, 150 (1995), pp. 912-915.

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