Heteroepitaxial growth of III-V materials

Details Heteroepitaxial growth of III-V materials Heteroepitaxial growth of III-V materials

1998-02-03

1999-08-17

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

438758, H01L 2120

Patent

active

059407239

ABSTRACT:
The specification describes a process for growing device quality III-V heteroepitaxial layers without the use of buffer layers, i.e. largely defect free layers with thicknesses greater than 50 Angstroms directly on the III-V substrate. These high quality heteroepitaxial layers are grown by low temperature MBE.

REFERENCES:
patent: 4863877 (1989-09-01), Fan et al.
patent: 4876218 (1989-10-01), Pessa et al.
patent: 5063166 (1991-11-01), Mooney et al.
patent: 5659187 (1997-08-01), Legoues et al.
Soderstrom et al., "Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates", Semiconductor Science and Technology, vol. 7, pp. 337-343 (no month given), 1992.

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