Heteroepitaxial growth of germanium on silicon by UHV/CVD

Details Heteroepitaxial growth of germanium on silicon by UHV/CVD Heteroepitaxial growth of germanium on silicon by UHV/CVD

1991-06-12

1993-11-09

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

456613, 456614, 456DIG67, 437126, 437131, C30B 2512

Patent

active

052599183

ABSTRACT:
A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-9 Torr; heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH.sub.4 partial pressure of 1-5 mTorr.

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Ishii et al, "Selective Ge Deposition on Si Using Thermal Decomposition of GeH.sub.4 ", Applied Physics Letters 47(8) Oct. 1985 pp. 863-865.

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