Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-06-04
2010-06-29
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S020000, C257SE29246
Reexamination Certificate
active
07745852
ABSTRACT:
There is provided a hetero junction field effect transistor including: a first layer of a nitride based, group III-V compound semiconductor; a second layer of a nitride based, group III-V compound semiconductor containing a rare earth element, overlying the first layer; a pair of third layers of a nitride based, group III-V compound semiconductor, overlying the second layer, the third layers being spaced from each other; a gate electrode disposed between the third layers at least a region of the second layer; and a source electrode overlying one of the third layers and a drain electrode overlying an other of the third layers. A method of fabricating the hetero junction field effect transistor is also provided.
REFERENCES:
patent: 2007/0138506 (2007-06-01), Braddock
patent: 2007/0164315 (2007-07-01), Smith et al.
patent: 2000-76024 (2000-03-01), None
patent: 2000-243947 (2000-09-01), None
patent: 2001-284577 (2001-10-01), None
patent: 2002-76024 (2002-03-01), None
patent: 2003-45900 (2003-02-01), None
patent: 2003-197645 (2003-07-01), None
Translation of JP 2003-197645.
Translation of JP 2000-243947.
Ken Nakata et al. “Normally Off AlGaN/GaN HEMT with Recessed Gate for High Power Applications,” IEICE Technical Report, Oct. 2005, vol. 105, No. 325, pp. 51-56.
Birch & Stewart Kolasch & Birch, LLP
Bryant Kiesha R
Sharp Kabushiki Kaisha
Tornow Mark W
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