Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-02-13
2007-02-13
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S338000, C438S342000, C257SE51040
Reexamination Certificate
active
11100511
ABSTRACT:
A hetero-junction bipolar transistor that satisfies high resistance required to avoid a potential breakdown includes: an n-type sub-collector layer110that is made of GaAs; an n-type first collector121that is made of a semiconductor material with a smaller avalanche coefficient than that of the sub-collector110and is formed on the sub-collector layer110; a second collector layer132that is made of n-type or i-type GaAs with lower dopant concentration than that of the sub-collector layer110and is formed on the first collector layer121; a p-type base layer133that is made of GaAs and is formed on the second collector layer132; and emitter layer134that is made of a semiconductor material with a larger band gap than that of the base layer133and is formed on the base layer133.
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Murayama Keiichi
Nogome Masanobu
Tamura Akiyoshi
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