Hetero-junction bipolar transistor and manufacturing method...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S338000, C438S342000, C257SE51040

Reexamination Certificate

active

11100511

ABSTRACT:
A hetero-junction bipolar transistor that satisfies high resistance required to avoid a potential breakdown includes: an n-type sub-collector layer110that is made of GaAs; an n-type first collector121that is made of a semiconductor material with a smaller avalanche coefficient than that of the sub-collector110and is formed on the sub-collector layer110; a second collector layer132that is made of n-type or i-type GaAs with lower dopant concentration than that of the sub-collector layer110and is formed on the first collector layer121; a p-type base layer133that is made of GaAs and is formed on the second collector layer132; and emitter layer134that is made of a semiconductor material with a larger band gap than that of the base layer133and is formed on the base layer133.

REFERENCES:
patent: 4958208 (1990-09-01), Tanaka
patent: 5903018 (1999-05-01), Shimawaki
patent: 5952672 (1999-09-01), Kikkawa
patent: 6525349 (2003-02-01), Hartmann
patent: 6800880 (2004-10-01), Tsai
patent: 6809400 (2004-10-01), Harmon et al.
patent: 6878976 (2005-04-01), Coolbaugh et al.
patent: 6881988 (2005-04-01), Niwa et al.
patent: 2002/0121675 (2002-09-01), Azuma et al.
patent: 2003/0047753 (2003-03-01), Fujita et al.
patent: 2003/0136956 (2003-07-01), Niwa et al.
patent: 02-191338 (1990-07-01), None
patent: 07-161727 (1995-06-01), None
patent: 07-193084 (1995-07-01), None
patent: 09-246281 (1997-09-01), None
patent: 11-243058 (1999-09-01), None
patent: 2000-260782 (2000-09-01), None
patent: 2000-260783 (2000-09-01), None
patent: 2003-163218 (2003-06-01), None
patent: 2003-218123 (2003-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hetero-junction bipolar transistor and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hetero-junction bipolar transistor and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hetero-junction bipolar transistor and manufacturing method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3889550

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.