Hetero junction bipolar transistor

Details Hetero junction bipolar transistor Hetero junction bipolar transistor

1994-10-05

1995-12-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

2571831, 257187, 257197, H01L 2906, H01L 2900, H01L 2978

Patent

active

054731720

ABSTRACT:
A hetero junction bipolar transistor which is high both in operating speed and in gain. The hetero junction bipolar transistor has a base layer consisting of Si (silicon) grown laterally by epitaxial growth, which isolates a collector region and an external base region from each other.

REFERENCES:
patent: 4698127 (1987-10-01), Hideshima et al.
patent: 4885614 (1989-12-01), Furakawa et al.
patent: 4903104 (1990-02-01), Kawai et al.
patent: 5144398 (1992-09-01), Morishita

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