Hetero-epitaxially grown compound semiconductor substrate and a

Details Hetero-epitaxially grown compound semiconductor substrate and a Hetero-epitaxially grown compound semiconductor substrate and a

1992-04-07

1994-04-05

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156614, 437 81, 437105, 437111, 437132, 437936, 437945, 437976, C30B 2516

Patent

active

053001869

ABSTRACT:
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

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Ser. No. 172,671 filing date Mar. 24, 1988.

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