Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Reexamination Certificate
2007-03-01
2009-10-27
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
C257S051000, C257S064000, C257SE29003, C977S790000, C977S825000
Reexamination Certificate
active
07608530
ABSTRACT:
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
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Kobayashi Nobuhiko
Wang Shih Yuan
Hewlett--Packard Development Company, L.P.
Ho Tu-Tu V
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