Hetero-bimos injection process for non-volatile flash memory

Details Hetero-bimos injection process for non-volatile flash memory Hetero-bimos injection process for non-volatile flash memory

2007-03-30

2009-10-06

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257SE29129

Reexamination Certificate

active

07598560

ABSTRACT:
A hetero-BiMOS injection system comprises a MOSFET transistor formed on a substrate and a hetero-bipolar transistor formed within the substrate. The bipolar transistor can be used to inject charge carriers into a floating gate of the MOSFET transistor. This is done by operating the MOSFET transistor to form an inversion layer in its channel region and operating the bipolar transistor to drive minority charge carriers from the substrate into a floating gate of the MOSFET transistor. The substrate provides a silicon emitter and a silicon germanium containing base for the bipolar transistor. The inversion layer provides a silicon collector for the bipolar transistor.

REFERENCES:
patent: 2006/0186457 (2006-08-01), Burnett et al.

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