Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1998-06-12
2000-04-11
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
357704, H01L 2334
Patent
active
060491272
ABSTRACT:
A method for fabricating a hermetically sealed tungsten-copper package container for a microwave device is provided with the steps of forming an injection feedstock by mixing a polymer binder with a tungsten powder having a particle diameter of 2 to 5 .mu.m and a purity 99.9 of weight percent, forming a three-dimensional part by applying a powder injection molding to the feedstock, obtaining a tungsten skeleton structure by eliminating the binder from the injection molded part, and carrying out a copper infiltration to a copper plate placed on the tungsten skeleton structure for two hours under a hydrogen atmosphere at a temperature of 1250.degree. C. The method incorporates an improved heat sink characteristic, a thermal expansion coefficient similar to that of GaAs, and a capability of applying thereto a strip wire connection, without an extra machining process.
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Choi Ju
Hong Kyung Tae
Kim Young Do
Lee Seung Ick
Lee Seung Woo
Jr. Carl Whitehead
Korea Institute of Science and Technology
Potter Roy
LandOfFree
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