Hermetically sealed microelectronic device and method of forming

Details Hermetically sealed microelectronic device and method of forming Hermetically sealed microelectronic device and method of forming

1996-11-07

1998-09-01

Picardat, Kevin

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 50, H01L 2100

Patent

active

058010688

ABSTRACT:
A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.

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