Hermetic sealing cap and method of manufacturing the same

Details Hermetic sealing cap and method of manufacturing the same Hermetic sealing cap and method of manufacturing the same

2007-02-06

2007-02-06

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S710000, C257S924000, C257SE23128, C257SE23180, C257SE23193, C257SE21500, C257SE21501

Reexamination Certificate

active

10926102

ABSTRACT:
A hermetic sealing cap member capable of suppressing deterioration of characteristics of an electronic component resulting from a sealant such as solder coming into contact with the electronic component in a package is obtained. This hermetic sealing cap, which is a hermetic sealing cap employed for an electronic component storing package for storing an electronic component (5, 34), comprises a hermetic sealing cap member (11, 41), a first plating layer (12, 42) formed at least on a region other than a region of the hermetic sealing cap member formed with a sealant (3, 32) and a second plating layer (13, 43), formed on the region of the hermetic sealing cap member on which the sealant is arranged, containing a material superior in wettability with the sealant to the first plating layer.

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Chinese Office Action dated Sep. 8, 2006, issued in corresponding Chinese Patent Application No. 2004800000491.

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