HEMT with a graded InGaAlP layer separating ohmic and...

Details HEMT with a graded InGaAlP layer separating ohmic and... HEMT with a graded InGaAlP layer separating ohmic and...

2005-07-19

2005-07-19

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S192000, C257S194000

Reexamination Certificate

active

06919589

ABSTRACT:
A semiconductor device comprises: a GaAs substrate; a buffer layer provided on the GaAs substrate; a laminated structure provided on the buffer layer; a Schottky contact layer provided on the laminated structure; a n-type Inx(Ga1−yAly)1−xP layer provided on the Schottky contact layer; a n-type Inu2Ga1−u2As ohmic contact layer provided on the n-type Inx(Ga1−yAly)1−P layer; a gate electrode provided on the Schottky contact layer; and a source electrode and a drain electrode provided on the ohmic contact layer. The buffer layer is made of a semiconductor, and at least a part of the semiconductor has a lattice constant larger than a lattice constant of GaAs. The channel layer is made of Inu1Ga1−u1As, and the electron supply layer is made of n-type Inv1Al1−v1As. At least a part of the Schottky contact layer is made of non-doped Inv2Al1−v2As. The Inx(Ga1−yAly)1−xP layer has a part where a bandgap has a distribution which shows a gradual or a stepwise decrease from the Schottky contact layer toward the ohmic contact layer.

REFERENCES:
patent: 5319223 (1994-06-01), Fujita et al.
patent: 5811843 (1998-09-01), Yamamoto et al.
patent: 3086748 (2000-09-01), None
S. Bollaert, et al., IEEE Electron Device Letters, vol. 20, No. 3, pp. 123-125, “METAMORPHIC In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs SUBSTRATE”, Mar. 1999.

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