HEMT transistor semiconductor device

Details HEMT transistor semiconductor device HEMT transistor semiconductor device

2005-03-17

2008-05-06

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S646000, C257S192000, C257SE29255, C438S780000

Reexamination Certificate

active

07368793

ABSTRACT:
The semiconductor device of the present invention includes a device formation region formed on a substrate and including at least one semiconductor region, and a first electrode and a second electrode formed spaced apart from each other on the device formation region. A semi-insulating film is formed to cover the surface of a portion of the semiconductor region, which portion is located between the first and second electrodes and in which portion a depletion layer extends when a reverse bias is applied between the first and second electrodes.

REFERENCES:
patent: 2004/0084775 (2004-05-01), Sugino et al.
patent: 2005/0064724 (2005-03-01), Sugino et al.
patent: 2005/0124176 (2005-06-01), Sugino et al.
patent: 2005/0189620 (2005-09-01), Sugino et al.
patent: 2006/0157729 (2006-07-01), Ueno et al.
patent: 2003-115487 (2003-04-01), None

Affiliated with

Also associated with

Rating

HEMT transistor semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HEMT transistor semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HEMT transistor semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3984946