HEMT device and method of making

Details HEMT device and method of making HEMT device and method of making

2006-08-29

2006-08-29

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S170000, C438S173000

Reexamination Certificate

active

07098093

ABSTRACT:
A HEMT type device which has pillars with vertical walls perpendicular to a substrate. The pillars are of an insulating semiconductor material such as GaN. Disposed on the side surfaces of the pillars is a barrier layer of a semiconductor material such as AlGaN having a bandgap greater than that of the insulating material of the pillars. Electron flow is confined to a narrow channel at the interface of the two materials. Suitable source, drain and gate contacts are included for HEMT operation.

REFERENCES:
patent: 4839310 (1989-06-01), Hollis et al.
patent: 2003/0205721 (2003-11-01), Nishii et al.

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