Hemispherical silicon grain capacitor with variable grain size

Details Hemispherical silicon grain capacitor with variable grain size Hemispherical silicon grain capacitor with variable grain size

2007-11-20

2007-11-20

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S295000, C257S905000, C257S534000, C257SE21647, C438S665000

Reexamination Certificate

active

11165034

ABSTRACT:
A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

REFERENCES:
patent: 5358888 (1994-10-01), Ahn et al.
patent: 6150216 (2000-11-01), Lin et al.
patent: 6399439 (2002-06-01), Yamanishi et al.
patent: 6537872 (2003-03-01), Tsao et al.
patent: 2004/0053474 (2004-03-01), Shin et al.
patent: 2000-196042 (2000-07-01), None
patent: 2000-216346 (2000-08-01), None
patent: 2001-196562 (2001-07-01), None
patent: 2002-222871 (2002-08-01), None
patent: 2002-334940 (2002-11-01), None
patent: 2002-368133 (2002-12-01), None
patent: 2003/0056805 (2003-07-01), None

Affiliated with

Also associated with

Rating

Hemispherical silicon grain capacitor with variable grain size does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hemispherical silicon grain capacitor with variable grain size, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hemispherical silicon grain capacitor with variable grain size will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3828313