Hemi-spherical structure and method for fabricating the same

Details Hemi-spherical structure and method for fabricating the same Hemi-spherical structure and method for fabricating the same

2008-05-06

2008-05-06

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S760000, C257SE21269, C257SE21396, C257SE21421

Reexamination Certificate

active

07368779

ABSTRACT:
Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete support structures respectively, and planarized portions on the substrate between the hemi-spherical film regions. Each of the hemi-spherical film regions in a position corresponding to each of the support structures serves as a hemi-spherical structure.

REFERENCES:
patent: 5316640 (1994-05-01), Wakabayashi et al.
patent: 5324623 (1994-06-01), Tsumori
patent: 5635037 (1997-06-01), Chu et al.
patent: 6251725 (2001-06-01), Chiou et al.
patent: 7163834 (2007-01-01), Lim
patent: 2004/0266096 (2004-12-01), Isobe et al.
patent: 2005/0074968 (2005-04-01), Chen et al.

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