Heavy ion implant process to eliminate polystringers in high den

Details Heavy ion implant process to eliminate polystringers in high den Heavy ion implant process to eliminate polystringers in high den

1998-04-21

2000-04-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

438257, H01L 21335, H01L 21336

Patent

active

060514515

ABSTRACT:
A method for fabricating a memory device is provided. A first polysilicon (poly I) layer is formed over a substrate. Poly I isolation rows are etched into the poly I layer so as to form electrically isolated poly I lines. An oxide-nitride-oxide (ONO) layer is formed over the poly I lines and field oxide portions exposed via the poly I isolation rows. A second polysilicon (poly II) layer is formed over the ONO layer. Poly II isolation rows are etched into the poly II layer so as to form electrically isolated poly II lines, the poly II isolation rows being perpendicular in direction to the poly I isolation rows, the poly II isolation rows exposing portions of the ONO layer. Heavy ions are implanted into portions of the poly I layer via the exposed portions of the ONO layer, wherein the heavy ions disrupt silicon bonds of the poly I layer portions. The exposed portions of the ONO layer and the poly I layer portions are substantially etched away.

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