Heavily doped region in double-diffused source MOSFET...

Details Heavily doped region in double-diffused source MOSFET... Heavily doped region in double-diffused source MOSFET...

2011-08-16

2011-08-16

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29119, C257SE21424

Reexamination Certificate

active

07999318

ABSTRACT:
A transistor includes a source, a drain and a gate. The source includes a p-doped p-body, a p+ region overlapping the p-body, an n+ region overlapping the p-body in proximity to the p+ region, and an n-doped source, heavily double-diffused (SHDD) region, only into the source region of the transistor, the SHDD region having a depth about equal to that of the first n+ region and overlapping the first n+ region. The drain includes a second n+ region and an n-doped shallow drain overlapping the second n+ region. The gate includes a gate oxide and a conductive material over the gate oxide. The SHDD region extends further laterally than the first n+ region beneath the gate oxide. The SHDD region is implanted using a dopant concentration greater than that of the n-doped shallow drain but less than that of the first n+ region.

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