Heating plate crystallization method

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S166000

Reexamination Certificate

active

06977206

ABSTRACT:
The present invention relates to a heating plate crystallization method used in the crystallization process for the poly-silicon thin-film transistor, and more particularly, the present invention relates to a heating plate crystallization method by using a pulsed rapid thermal annealing process (PRTP). By means of the characteristic provided by the present invention, namely, the heating plate area has a better absorption rate to the infrared rays and has a high thermal stability. The heating plate area is used for absorbing the infrared rays, and after the heating, the energy is indirectly transferred to the amorphous layer via a thermal conduction method so that the amorphous layer will be rapidly crystallized to form the poly-silicon. Furthermore, the present invention uses the pulsed rapid thermal annealing process (PRTP) using the infrared rays to instantly heat, to selectively heat the materials by taking the advantage that different materials have different absorption rates to the infrared rays. However, the glass substrate and the amorphous cannot effectively absorb the infrared rays so that the glass substrate will not be broken while the process temperature of the heating plate area is excessively high (>700° C.). Therefore, the most effective rapid thermal crystallization can be achieved.

REFERENCES:
patent: 5219786 (1993-06-01), Noguchi
patent: 5265114 (1993-11-01), Sun et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5824574 (1998-10-01), Yamazaki et al.
patent: 6087245 (2000-07-01), Yamazaki et al.
patent: 6602765 (2003-08-01), Jiroku et al.
patent: 2003/0059991 (2003-03-01), Teramoto et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Heating plate crystallization method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heating plate crystallization method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heating plate crystallization method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3495056

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.