Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-01-22
1998-04-21
Nguyen, Keit T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504922, H01J 3108
Patent
active
057420653
ABSTRACT:
A method for reducing contamination in a silicon membrane mask in a lithography system is described. The method includes: doping the top surface of the silicon membrane mask with boron to lower the electrical resistance of the mask; subsequently metalizing the surface of the mask to further lower its electrical resistance; and, finally, applying a voltage between opposite surfaces of the mask, the voltage generating an electric field that passes through the membrane mask, heating the membrane mask. The method further includes: calculating distortions in the shape of each of the patterns within the mask caused by heating the membrane mask; compensating for the proximity of other shapes positioned in the vicinity of each of the patterns; and appropriately modifying the shape of each of the patterns. The above described method can be equally applied to an e-beam system or to an ion-beam lithography system, and both, to stencil masks and to scattering masks.
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Gordon Michael Stuart
Kendall Rodney Arthur
Pinckney David John
Speidell James Louis
International Business Machines - Corporation
Nguyen Keit T.
Schnurmann H. Daniel
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