Heated SC1 solution for selective etching

Details Heated SC1 solution for selective etching Heated SC1 solution for selective etching

1993-05-14

1995-05-09

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 791, B05D 500

Patent

active

054136784

ABSTRACT:
NH.sub.4 OH:H.sub.2 O.sub.2 :H.sub.2 O solution is used for selective wet etching of different films such as TEOS oxide, borophosphosilicate glass (BPGS), nitride, doped polysilicon, and thermal oxide.

REFERENCES:
patent: 4867799 (1989-09-01), Grebinski
patent: 4940509 (1990-07-01), Tso et al.
patent: 4948757 (1990-08-01), Jain et al.
patent: 5127984 (1992-07-01), Hua et al.
patent: 5143103 (1992-09-01), Basso et al.
patent: 5147499 (1992-09-01), Szwejkowski et al.
Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology, by W. Kern, RCA Laboratories, Princeton, N.J., RCA Review, Jun. 1970, 187-206.

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