Heat treatment jig for semiconductor wafers and a method for tre

Details Heat treatment jig for semiconductor wafers and a method for tre Heat treatment jig for semiconductor wafers and a method for tre

1995-11-16

1998-06-02

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

427309, 427402, 427534, 134 13, H01L 21302

Patent

active

057594260

ABSTRACT:
A silicon nitride layer 12b is thermally grown on the topmost surface of the heat treatment jig 12 composed of silicon or silicon carbide in a nitrogen ambience. The silicon nitride layer 12b is thermally grown in a nitrogen ambience in the temperature range of 1,100.degree. C.-1,300.degree. C. It is desirable to remove slightly the surface of the jig by, for example, hydrogen etching before thermally growing the silicon nitride layer 12b. After the etching, a silicon oxide layer can be thermally grown on the jig surface in an oxygen ambience before thermally growing the silicon nitride layer 12b.

REFERENCES:
patent: 4865685 (1989-09-01), Palmour
patent: 5494524 (1996-02-01), Inaba et al.

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