Heat treatment jig for semiconductor silicon substrate

Heating – Accessory means for holding – shielding or supporting work...

Reexamination Certificate

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C432S259000, C211S041180

Reexamination Certificate

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10771225

ABSTRACT:
This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a result of the stress caused by the weight of the wafer itself or the deflection of the heat treatment jig itself.

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Patent Abstracts of Japan for JP2001-102318 published on Apr. 13, 2001.
Patent Abstracts of Japan for JP2001-060559 published on Mar. 6, 2001.
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Patent Abstracts of Japan for JP2003-037112 published on Feb. 7, 2003.

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