Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-05-23
2006-05-23
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Reexamination Certificate
active
07049250
ABSTRACT:
A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes selecting thickness values for the layers of the wafer to provide substantially equivalent heat absorption coefficients both in the central region and the edge of the wafer. This results in a substantially equivalent temperature being attained over the surface of the central region and the peripheral edge during thermal treatment. In turn, that prevents the appearance of slip lines on those surfaces while also preventing deformation of the wafer due to the thermal treatment. To achieve the desired thickness, layers or portions of layers can be selectively added or otherwise provided upon the central region or peripheral edge of the wafer, or on both, to modify the heat absorption coefficient of the wafer.
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Timans et al., “Handbook of Semiconductor Manufacturing Technology”, p. 224 (2000).
Maleville Christophe
Neyret Eric
S.O.I.Tec Silicon on Insulator Technologies S.A.
Sarkar Asok Kumar
Winston & Strawn LLP
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