Heat treatment for compound semiconductor wafer

Details Heat treatment for compound semiconductor wafer Heat treatment for compound semiconductor wafer

1990-11-13

1992-03-24

Kunemund, Robert

Fishing, trapping, and vermin destroying

437939, 437945, 437949, 437963, 156DIG73, H01L 21324

Patent

active

050988670

ABSTRACT:
A compound semiconductor wafer wherein arsenide deposit is included with uniform size and distribution in such a manner that a compound reagent of gallium and polycrystal gallium arsenide is melted at 600.degree..about.700.degree. C. for 1.about.5 hours and such a reagent is contacted with a gallium arsenide wafer at above 900.degree. C. for 2.about.5 hours so arsenide to make the unevenly distributed arsenide deposit uniform and maintain such an arsenide deposit at 600.degree..about.700.degree. C. for 5.about.30 hours, thereby removing thermal stress therefrom.

REFERENCES:
patent: 3649193 (1972-03-01), Deyris
patent: 3783825 (1974-01-01), Kobayasi et al.
patent: 4312681 (1982-01-01), Rupprecht et al.
patent: 4317689 (1982-03-01), Bowers et al.
patent: 4820651 (1989-04-01), Prince et al.

Affiliated with

Also associated with

Rating

Heat treatment for compound semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heat treatment for compound semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat treatment for compound semiconductor wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2010048