Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Reexamination Certificate
2007-02-20
2007-02-20
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
C438S487000, C438S530000
Reexamination Certificate
active
10001197
ABSTRACT:
A heat treatment apparatus which enables a heating process for a short time with high reproducibility in a manufacturing process of a MOS transistor manufactured using a semiconductor substrate, and a method of manufacturing a semiconductor device using the heat treatment apparatus are provided. The heat treatment apparatus of the present invention which enables the above heat treatment method is characterized by comprising: a light source; a power supply for turning the light source on and off in a pulse shape; a processing chamber in which the substrate can be irradiated with light from the light source; and a unit for supplying a coolant to the processing chamber and also increasing and decreasing the supply amount.
REFERENCES:
patent: 3612939 (1971-10-01), Rabinowitz
patent: 5444217 (1995-08-01), Moore et al.
patent: 5508532 (1996-04-01), Teramoto
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5530265 (1996-06-01), Takemura
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5712495 (1998-01-01), Suzawa
patent: 5719065 (1998-02-01), Takemura et al.
patent: 5731637 (1998-03-01), Hori et al.
patent: 5739549 (1998-04-01), Takemura et al.
patent: 5754260 (1998-05-01), Ooi et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5945711 (1999-08-01), Takemura et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 6087245 (2000-07-01), Yamazaki et al.
patent: 6105274 (2000-08-01), Ballantine et al.
patent: 6140166 (2000-10-01), Ohtani et al.
patent: 6140668 (2000-10-01), Mei et al.
patent: 6143630 (2000-11-01), Tregilgas
patent: 6156628 (2000-12-01), Ohnuma et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6187616 (2001-02-01), Gyoda
patent: 6201585 (2001-03-01), Takano et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6306694 (2001-10-01), Yamazaki et al.
patent: 6333493 (2001-12-01), Sakurai et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6342322 (2002-01-01), Kakinuma et al.
patent: 6482704 (2002-11-01), Amano et al.
patent: 6599818 (2003-07-01), Dairiki
patent: 6759313 (2004-07-01), Yamazaki et al.
patent: 2001/0005019 (2001-06-01), Ishikawa
patent: 2001/0005606 (2001-06-01), Tanaka et al.
patent: 2001/0009283 (2001-07-01), Arao et al.
patent: 2001/0015441 (2001-08-01), Kawasaki et al.
patent: 2002/0053670 (2002-05-01), Ohtani et al.
patent: 2002/0068422 (2002-06-01), Dairiki et al.
patent: 2002/0084261 (2002-07-01), Yamazaki
patent: 2004/0077185 (2004-04-01), Dairiki
patent: 2004/0241967 (2004-12-01), Yamazaki et al.
patent: 0 651 431 (1995-05-01), None
patent: 1 158 580 (2001-11-01), None
patent: 07-183540 (1995-07-01), None
patent: 2000234165 (2000-08-01), None
U.S. Appl. No. 09/970,908, Filed: Oct. 5, 2001, “Semiconductor Device Manufacturing Method, Heat Treatment Method”.
T. Tsutsui et al., “Electroluminescence in Organic Thin Films,” reprinted fromPhotochemical Processes in Organized Molecular Systems, Proceedings of the Memorial Conference for the late Professor Shigeo Tazuke, Yokahama, Japan, Sep. 22-24, 1990, Elsevier Science Publishers B.V., Sep. 22, 1990, pp. 437-450.
M.A. Baldo et al., “Highly efficient phosphorescent emission from organic electroluminescent devices,”Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
M.A. Baldo et al., “Very high-efficiency green organic light-emitting devices based on electrophosphorescence,”Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999, pp. 4-6.
T. Tsutsui et al., “High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center,”Japanese Journal of Applied Physics, vol. 38, Dec. 25, 1999, pp. L1502-L1504.
M. A. Crowder et al., “Low-Temperature Single-Crystal Si TFT's Fabricated on Si Film s Processed via Sequential Lateral Solidification,” IEEE Electron Device Letters, vol. 19, No. 8, pp. 306-308, Aug. 1, 1998.
G. Radnoczi et al., “Al Induced Crystallization of a-Si,” Journal of Applied Physics, vol. 69, No. 9, pp. 6394-6399, May 1, 1991.
Dairiki Koji
Yamazaki Shunpei
Costellia Jeffrey L.
Nixon & Peabody LLP
Perkins Pamela E
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra V.
LandOfFree
Heat treatment apparatus and method of manufacturing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heat treatment apparatus and method of manufacturing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat treatment apparatus and method of manufacturing a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3871083