Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-09-05
1999-03-09
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438585, 438592, 438659, 438660, 438669, 438705, 438719, H01L 2100
Patent
active
058799753
ABSTRACT:
The etch profile of side surfaces of a gate electrode is improved by heat treating the gate electrode layer after nitrogen implantation and before etching to form the gate electrode. Nitrogen implantation at high dosages to prevent subsequent impurity penetration through the gate dielectric layer, e.g., B penetration, amorphizes the upper portion of the gate electrode layer resulting in concave side surfaces upon etching to form the gate electrode. Heat treatment performed after nitrogen implantation can restore sufficient crystallinity so that, after etching the gate electrode layer, the side surfaces of the resulting gate electrode are substantially parallel.
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Bell Scott A.
Ibok Effiong
Ju Dong-Hyuk
Karlsson Olov
Ogle Robert
Advanced Micro Devices , Inc.
Gurley Lynne A.
Niebling John F.
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