Heat transfer control during crystal growth

Details Heat transfer control during crystal growth Heat transfer control during crystal growth

1987-06-10

1989-04-18

Dixon, Jr., William R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

422245, C30B 1534

Patent

active

048224499

ABSTRACT:
Heat transfer from the surface of a crystal during crystal growth is controlled by surrounding the crystal with plural coaxial heat transfer modules. The heat transfer modules are stacked along the crystal axis. Each module includes apparatus for monitoring a temperature drop across a radially extending gradient region of the module. A heating element in the module responsive to the temperature drop controls heat transfer through the module which is equal to the heat transfer from the crystal surface at the axial location of the module. The control system also controls heat transfer from the top of the crystal by controlling the temperature to which the crystal top radiates. Control of heat transfer from the crystal surface prevents excessive thermal stress experienced by the crystal solid during growth reducing the presence of massive dislocation networks.

REFERENCES:
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patent: 4248645 (1981-02-01), Jewett
patent: 4267010 (1981-05-01), Bates et al.
patent: 4314128 (1982-02-01), Chitre
patent: 4417944 (1983-11-01), Jewett
patent: 4461671 (1984-07-01), Seifert et al.
patent: 4584054 (1986-04-01), Holland
patent: 4610754 (1986-09-01), Gaida et al.
patent: 4645560 (1987-02-01), Matsumoto et al.
patent: 4664742 (1987-05-01), Tomizawa et al.
patent: 4686091 (1987-08-01), Washizuka et al.

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