Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2006-06-27
2006-06-27
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S675000, C257S705000, C257S706000, C257S707000, C257S709000
Reexamination Certificate
active
07067903
ABSTRACT:
A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
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Hayashi Kazushi
Inoue Ken-ichi
Kawakami Nobuyuki
Kobashi Koji
Kobori Takashi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Kabushiki Kaisha Kobe Seiko Sho
Rao Shrinivas H
Reed Smith LLP
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