Heat-resisting ohmic contact on semiconductor diamond layer

Details Heat-resisting ohmic contact on semiconductor diamond layer Heat-resisting ohmic contact on semiconductor diamond layer

1994-02-01

1995-07-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 77, 257764, 257770, 437192, H01L 2348, H01L 2940

Patent

active

054365058

ABSTRACT:
Disclosed is a heat-resistant ohmic contact formed on a semiconducting diamond. It has a contact Ti layer having a thickness of 10 to 70 .ANG. and a carbide layer generated by the reaction between the Ti layer and the semiconducting diamond layer. A diffusion prevention layer composed of at least one kind material selected from a group consisting of refractory metals including W, Mo, Au, Pt and Ta, refractory alloys including Ti-W, and refractory compounds including TiC and TiN is formed on the contact Ti layer. With this construction, the diffusion and the oxidation of Ti can be prevented.

REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5043773 (1991-08-01), Precht et al.
patent: 5132749 (1992-07-01), Nishibayashi et al.
patent: 5144380 (1992-09-01), Kimoto et al.
patent: 5243199 (1993-09-01), Shiomi et al.
patent: 5278431 (1994-01-01), Das
patent: 5313101 (1994-05-01), Harada et al.

Affiliated with

Also associated with

Rating

Heat-resisting ohmic contact on semiconductor diamond layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heat-resisting ohmic contact on semiconductor diamond layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat-resisting ohmic contact on semiconductor diamond layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-741658