Heat removal in SOI devices using a buried oxide...

Details Heat removal in SOI devices using a buried oxide... Heat removal in SOI devices using a buried oxide...

2007-07-03

2007-07-03

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C257SE21561, C438S928000

Reexamination Certificate

active

10973871

ABSTRACT:
A method of forming a silicon-on-insulator substrate is disclosed, including providing a silicon substrate; depositing a first insulation layer over the silicon substrate; forming a conductive layer over the first insulation layer to a first structure; providing a second structure comprising a silicon device layer and a second insulation layer; bonding the first structure and the second structure together so that the conductive layer is located between the first and second insulation layers; and removing a portion of the silicon device layer thereby providing the silicon-on-insulator substrate having two discrete insulation layers. In one embodiment, the method further includes forming at least one conductive plug through the silicon substrate and the first insulation layer and/or the second insulation layer so as to contact the conductive layer. Methods of facilitating heat removal from the device layer are disclosed.

REFERENCES:
patent: 5387555 (1995-02-01), Linn et al.
patent: 5599739 (1997-02-01), Merchant et al.
patent: 5670387 (1997-09-01), Sun
patent: 6586284 (2003-07-01), Kim
patent: 6627953 (2003-09-01), Vu et al.
patent: 2001/0033001 (2001-10-01), Kato
patent: 2002/0020874 (2002-02-01), Gimonet

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