Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-03-27
2007-03-27
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S712000, C257S678000, C257S685000, C257S686000, C257S713000, C257S723000
Reexamination Certificate
active
10944400
ABSTRACT:
Disclosed herein are IC package devices and related methods of manufacturing. In one embodiment, an package device includes first and second package substrates, and a first IC chip having at least one coupling structure formed on its active region for electrically coupling the first chip to the first substrate. The IC package also includes a second IC chip having at least one coupling structure formed on its active region for electrically coupling the second chip to the second substrate. The IC package also includes a heat spreader configured to disperse heat from the first and second chips, where the heat spreader has a first surface coupled to a backside of the first chip, and a second surface that coupled to a backside of the second chip. Thus, the backsides of the two chips are oriented towards each other. The internal heat spreader also provide support across the IC package to prevent warpage, and thus maintain coplanarity of the IC package.
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Baker & McKenzie LLP
Ho Hoang-Quan
Huynh Andy
Taiwan Semiconductor Manufacturing Company , Ltd.
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