Heat assisted switching and separated read-write MRAM

Details Heat assisted switching and separated read-write MRAM Heat assisted switching and separated read-write MRAM

2011-07-12

2011-07-12

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07978505

ABSTRACT:
A MRAM structure is described that has a dedicated data storage layer formed between first and second electrodes and a dedicated data sensing layer between second and third electrodes to enable separate read and write functions. A diode between the storage layer and first electrode allows a heating current to flow between first and second electrodes to switch the data storage layer while a field is applied. A second diode between the sensing layer and third electrode enables a sensing current to flow only between second and third electrodes during a read process. Data storage and sensing layers and the three electrodes may be arranged in a vertical stack or the sensing layer, second diode, and third electrode may be shifted between adjacent stacks each containing first and second electrodes, a storage layer, and first diode. Second electrode and the sensing layer may be continuous elements through multiple MRAMs.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6771534 (2004-08-01), Stipe
patent: 6885573 (2005-04-01), Sharma et al.
patent: 6911685 (2005-06-01), Anthony et al.
patent: 6961263 (2005-11-01), Smith et al.
patent: 7009877 (2006-03-01), Huai et al.
patent: 7180770 (2007-02-01), Perner et al.
patent: 7372116 (2008-05-01), Fullerton et al.
patent: 7397074 (2008-07-01), Nickel
patent: 2006/0291276 (2006-12-01), Nozieres et al.
patent: 2007/0184613 (2007-08-01), Kim et al.
patent: 2007/0189064 (2007-08-01), Min et al.

Affiliated with

Also associated with

Rating

Heat assisted switching and separated read-write MRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heat assisted switching and separated read-write MRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat assisted switching and separated read-write MRAM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2663246