Healing of micro-cracks in an on-chip dielectric

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Reexamination Certificate

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C257S659000, C257S683000

Reexamination Certificate

active

06975017

ABSTRACT:
In one embodiment there is provided a method comprising performing a sawing operation on a wafer; and treating the wafer to at least reduce a propagation of micro-cracks formed in the wafer during the sawing. In another embodiment there is provided a semi-conductor die comprising a substrate having a central first portion, and a peripheral second portion around the central first portion; an integrated circuit formed on the central first portion; and a guard ring disposed between the first and second portions of the substrate to prevent a propagation of cracks found in that second portion to the first portion, wherein the second portion includes micro-cracks filled with a crack-healing material to arrest propagation of the micro-cracks beyond the guard ring and into the central first portion.

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