He treatment to improve low-k adhesion property

Details He treatment to improve low-k adhesion property He treatment to improve low-k adhesion property

2006-12-05

2006-12-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S623000

Reexamination Certificate

active

07144828

ABSTRACT:
A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer wherein there is good adhesion between the low dielectric constant material layer and the overlying layer.

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