HDP process for high aspect ratio gap filling

Details HDP process for high aspect ratio gap filling HDP process for high aspect ratio gap filling

2005-07-05

2005-07-05

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S435000, C438S787000, C438S424000

Reexamination Certificate

active

06914015

ABSTRACT:
An HDP process for high aspect ratio gap filling comprises contacting a semiconductor substrate with an oxide precursor under high density plasma conditions at a first pressure less than about 10 millitorr, wherein said gaps are partially filled with oxide; and further contacting the substrate with an oxide precursor under high density plasma conditions at a second pressure greater than about 10 millitorr, wherein said gaps are further filled with oxide.

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High-Density Plasma Chemical Vapor Deposition of Silicon-Based Dielectric Films for Integrated Circuits, S.V. Nguyen; IBM Journal of Research and Development, vol. 43, 1/2, 1999, Plasma Processing.

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