HCT Crystal growth method

Details HCT Crystal growth method HCT Crystal growth method

1982-11-08

1985-10-08

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 2102

Patent

active

045458480

ABSTRACT:
A method of preparing pseudobinary mercury, cadmium, telluride (HCT) crystals by controlled crystal growth in a fused silica ampule uses a modified Bridgman-Stockbarger method. In this method, the alloy is cast into one end of the ampule, inverted, heated to a temperature between the liquidus and solidus temperatures of the alloy and directionally solidified in a two zone furnace. The parameters of the solidification treatment are controlled according to the formula

REFERENCES:
patent: 3514265 (1970-05-01), Pastore
patent: 4050905 (1977-09-01), Swinehart
Micklethwaite, Semiconductors & Semimetals, vol. 18 Mercury Cadmium Telluride, Academic Press, 1981, pp. 47-119.
Fiorito et al., J. Electrochem. Soc.: Solid-State Science and Technology, pp. 315-317, 2/78.
Szofran et al., The Pseudobinary HgTe-CdTe Phase Diagram, J. Electronic Materials, vol. 10, p. 1131 (1981).

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