Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-09-03
1989-07-11
Stoll, Robert L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156DIG72, 156DIG82, 437102, 427 76, C30B 2302
Patent
active
048469262
ABSTRACT:
A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).
REFERENCES:
patent: 3725135 (1973-04-01), Hager et al.
patent: 4376659 (1983-03-01), Castro
patent: 4418096 (1983-11-01), Gauthier et al.
patent: 4447470 (1984-05-01), Kay
patent: 4487813 (1984-12-01), Kay
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4655848 (1987-04-01), Kay et al.
Tufte et al., "Growth and Properties of Hg.sub.1-x Cd.sub.x Te Epitaxial Layers", J. Appl. Phys. vol. 40, No. 11 (1969) pp. 4559-4568.
Cohen-Solal et al., "Epitaxial (CdHg)Te Infrared Photovoltaic Detectors", Appl. Phys. Let., vol. 19, No. 10 (1971), pp. 436-438.
Willardson et al., "Semiconductors and Semimetals", Academic Press, vol. 18 (1981) pp. 92-106.
Piotrowski, T., "Preparation of Hg.sub.1-x-y Cd.sub.x Mn.sub.y Te Crystals by Isothermal Growth Method", J. Crys. Growth 72 (1985) pp. 117-119.
Bray Burton A.
Chan Hakchill
Ju Fred
Kay Robert E.
Breneman R. Bruce
Ford Aerospace & Communications Corporation
Radlo Edward J.
Stoll Robert L.
Zerschling Keith L.
LandOfFree
HcCdTe epitaxially grown on crystalline support does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with HcCdTe epitaxially grown on crystalline support, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HcCdTe epitaxially grown on crystalline support will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-434890